Exploring semiconductor substrates for silicene epitaxy

Epitaxy of semiconductor-superconductor nanowires.

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epi...

Growth of polar and non-polar nitride semiconductor quasi-substrates by hydride vapor phase epitaxy for the development of optoelectronic devices by molecular beam epitaxy

The family of nitride semiconductors has had a profound influence on the development of optoelectronics for a large variety of applications. However, as of yet there are no native substrates commercially available that are grown by liquid phase methods as with Si and GaAs. As a result, the majority of electronic and optoelectronic devices are grown heteroepitaxially on sapphire and SiC. This Ph...

Does the Dirac Cone Exist in Silicene on Metal Substrates?

Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calculations for silicene on Ir, Cu, Mg, Au, Pt, Al, and Ag substrates. The destroyed Dirac cone of silicene, however, can be effectively restored with linear or parabolic dispersion by intercalating alkali metal atoms betwe...

Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy - Electronics Letters

conductivity of the sample and was measured by determining the change in the optical sampling beam polarisation due to a linear electro-optic effect in the cell. The intrinsic time resolution of this experiment is defined by the laser pulse duration. It was however a little worse than 7ps because of the poor impedance matching at the place where the sample was connected into the stripline struc...

Chemical Beam Epitaxy of Iii-v Semiconductor Heterostructures